High quality, epitaxial Ba(Zr 0.35 Ti 0.65)O 3 thin films were fabricated via radio frequency magnetron sputtering technique. The leakage current density vs electric field (J–E) tests were conducted using the device structures with Pt top electrodes and Nb-doped SrTiO 3 bottom electrodes.The conduction mechanism of the films and the J–E …
Learn MoreFurther analysis suggests that at higher fields and temperatures, bulk-limited field-enhanced thermal ionization of trapped carriers (i.e., Poole-Frenkel emission) is the controlling mechanism. The activation energies calculated for the films are in …
Learn MoreWe present a study of the effect of electrically induced cracks on both the ferroelectric and piezoelectric properties of Pt/PbZr 0.52 Ti 0.48 O 3 (PZT)/Pt capacitors and correlations with domain structures of PZT films. Above a threshold bipolar electric field, cracks appear inside the PZT layer thickness leading to an increase in the ferroelectric …
Learn MoreFERROELECTRIC THIN FILM CAPACITORS In Kyeong Yoo Samsung Fellow, V-Team, SamsungAdvancedInstitute of Technology, Suwon, SouthKorea Abstract: Basic test on ferroelectric capacitor is provided with theoretical background. Special tests are proposed for ferroelectric memory applications. Some reliability issues are also presented in FRAM …
Learn MoreIn this study, we experimentally demonstrate that thin-film capacitors with a rough electrode show a higher electrical capacitance than the value …
Learn MoreThin-film ferroelectric capacitors consisting of PbZr 0.53 Ti 0.47 O 3 sandwiched between La 0.5 Sr 0.5 CoO 3 electrodes have been deposited using pulsed laser deposition. The combination of oxidic perovskite-type materials results in capacitors with a coercive field (E c) which is comparable with values for bulk ceramics. Textured …
Learn MoreThe endurance of our HAO thin film increases with a decreasing E-field. A minimum endurance of 4 × 10 4 cycles at 5 V operation voltage and 1 × 10 6 cycles at 4 V is obtained.
Learn MoreBy varying the substrate lattice constant and film thickness, a robust remanent polarization of ≈16 μC cm −2 is achieved in a 12 nm-thick Pt/La:HfO 2 /La 0.67 …
Learn MoreThis study presents the construction and dielectric properties investigation of atomic-layer-deposition Al2O3/TiO2/HfO2 dielectric-film-based metal–insulator–metal (MIM) capacitors. The influence of the dielectric layer material and thickness on the performance of MIM capacitors are also systematically investigated. The morphology …
Learn MoreRecently, doped HfO 2 thin films have attracted considerable attention because of promising applications in complementary metal–oxide–semiconductor (CMOS)-compatible ferroelectric memories. Herein, the ferroelectric properties and polarization fatigue of La:HfO 2 thin-film capacitors are reported. By varying the substrate lattice …
Learn MoreThe problem of thickness dependence of dielectric and ferroelectric properties of Pb (Zr 0.54 Ti 0.46) O 3 (PZT) thin film capacitors is addressed. Experimental data collected on PZT capacitors with different thicknesses and different electrode configurations, using platinum and LaNiO 3 conducting oxide, are examined within the …
Learn MoreNondestructive techniques are used to avoid disrupting the local electrostatic and mechanical boundary conditions present in the thin film capacitors, to …
Learn MoreA large DW current in an Au/BFO/SRO thin-film capacitor was observed under controlling of the volume of the switched domains to increase the DW density [25, 31, 32]. In addition, a model was developed after quantitative analysis of the measured current-voltage data at room temperature. 2. Experimental method
Learn MoreHere by using the Nb:SrTiO 3 semiconductor as electrode compared with metal Au electrode, we report on the modulation of ferroelectric properties of P(VDF-TrFE) thin film capacitors both by electric field and UV light. A ferroelectric hysteresis loop shift together with the asymmetric switching behavior has been observed when using ...
Learn MoreFerroelectric thin film capacitors have attracted increasing attention because of their high energy storage density and fast charge–discharge speed, but less attention has been paid to the ...
Learn Morecapacitor to capacitor and was observed for both polarities of the applied voltage. A similar trend was also observed in thinner films as shown in Figure S1 in Supplementary Information. The switching dynamics fits well the Merz''s empirical equation [39]: t sw = t 0 exp(E a /E), where t 0 is the field independent switching time factor and E a
Learn MoreThe full-field tempo-spatial evolution of temperature of high temperature metalized thin-film polymer capacitors when accompanying with Joule heating is essentially governed by: ∂ T (x) ∂ t = K ρ c ∇ 2 T (x) + σ (x, T) E 2 ρ c where K is the thermal conductivity of the capacitor with anisotropy detailed in Section 2.2.1, ρ is the ...
Learn MoreDue to thin film capacitor''s enhanced reliability and improved input current harmonic performance, adjustable speed drives (ASDs) without using electrolytic dc-link capacitors have been researched extensively in recent years. However, because of challenging stability and motor control issues associated with small thin film based dc-link capacitors, in …
Learn MoreThe analytical partial capacitance methods (PCM) widely accepted for calculation of properties of capacitors with planar electrodes, coplanar strip waveguides …
Learn MoreThe measurements of high-frequency dielectric displacement-electric field hysteresis loops show the continuous reduction of the apparent coercive field upon the lateral size shrinkage of TiN/Hf0.5Zr0.5O2/TiN thin-film capacitors. Subsequent measurements of capacitor discharging current transients show the presence of high resistance of an interfacial layer …
Learn MoreRequest PDF | Strain Engineering of Energy Storage Performance in Relaxor Ferroelectric Thin Film Capacitors | Dielectric energy storage capacitors are receiving a great deal of attention owing to ...
Learn MoreThis paper describes a detailed physical analysis of the electric fields, space charges, and polarization of thin-film ferroelectric devices. The analysis is based on a previously developed model of the electric field dependent polarization, permittivity, and hysteresis of the thin-film polycrystalline ferroelectric, which was derived from the …
Learn MoreThis report analyzes the ferroelectric properties of two thin film capacitors, which were post-deposition annealed in N 2 and O 2 atmospheres to achieve the orthorhombic phase after room temperature deposition. The samples, which exhibit very similar constituent phase, appear identical in conventional polarization-field hysteresis measurements.
Learn MoreField‐Induced Ferroelectric Phase Evolution During Polarization "Wake‐Up" in Hf 0.5 Zr 0.5 O 2 Thin Film Capacitors. ... analysis methods are used to characterize ferroelectric hafnium ...
Learn MoreElectrostatic capacitors are among the most important components in electrical equipment and electronic devices, and they have received increasing attention over the last two decades, especially in the fields of new energy vehicles (NEVs), advanced propulsion weapons, renewable energy storage, high-voltage transmission, and medical …
Learn MoreA mean dielectric breakdown field strength (E B) of ≈1.25 MV/cm was determined by Weibull analysis for the ≈8-μm-thick PLZT film capacitors fabricated on flexible aluminum-metallized polyimide substrates. These results revealed that the PLZT-based ceramic film capacitors meet the requirements for advanced high-temperature …
Learn MoreThin Solid Films-Elsevier Sequoia S.A., Lausanne-Printed in Switzerland 325 ANALYSIS OF INTERDIGITATED THIN FILM CAPACITORS L. BINOTTO AND G. F. PIACENTINI Quality Control Laboratory, c/o Telettra S.p.A., 20059 Vimercate, Milano (Italy) (Received May 16, 1972) A thorough analysis is made of geometrical effects on the …
Learn MoreAfter annealing at 550°C the PZT/AO/PZT tri-layer film displayed an energy density and efficiency of 63.7 J/cm 3 and 81.3%, respectively, at an applied electric field of 5.71 MV/cm. 43 McMillen et al. 45 introduced an Al 2 O 3 (AO) layer in the (BiFeO 3)0.6–(SrTiO 3)0.4 (BFST) film to form an AO/BFST thin film heterostructure where AO …
Learn MoreBiFeO 3 thin film capacitors were fabricated on low cost ITO substrates using PLD technique.. Effect of variation of incident laser energy from 150 mJ to 250 mJ was studied. • igh energy density of 191 mJ/cm 3 with 43% efficiency was obtained for BFO capacitor prepared at 200 mJ laser energy.. Tuning of laser fluence found to be relevant …
Learn MoreIn this work, non-destructive techniques are used to avoid disrupting the local electrostatic and mechanical boundary conditions present in Hf 0.5 Zr 0.5 O 2 (HZO) thin film capacitors and to provide statistically meaningful analysis volumes to assess the structural changes that accompany field-induced polarization switching. We compare …
Learn MoreThis paper confirms from a large amount of experimental data and theoretical analysis that W-electrode HZO thin films have very high irradiation resistance, …
Learn MoreAnalysis of weak-field and strong field hysteresis loops in the M2 region below Tf suggests the presence of a weakly-polar structure exhibiting antipolar behavior (i.e., a non-compensated ...
Learn More6 · This work investigates the mechanism for the memory window (MW) suppression of the ferroelectric-thin film transistors (FETFTs) with an amorphous indium-gallium-zinc (a-IGZO) channel.a-IGZO generally has an n-type character with a high bandgap (>3 eV) and a high density of gap states, hindering the carrier type inversion.Therefore, the negative …
Learn MoreAdvances have been made in the electronic characterization and analysis of thin-film ferroelectric (FE) memory capacitors using capacitance vs. voltage (C-V) measurements. ... A mathematical model of the small-signal electrical behavior of the FE capacitor has been developed. This analysis shows that the small-signal characteristics …
Learn MoreSince the most common material of a capacitor electrode plate is aluminium (Al), one of the selected contrasting capacitors was an Al electrode capacitor (''Al capacitor'' for short) based on doubled-sided Al thin film which was deposited on a LaAlO 3 substrate and also coated with Au surface layers. For the purpose of …
Learn MoreAs passive components in flexible electronics, the dielectric capacitors for energy storage are facing the challenges of flexibility and capability for integration and miniaturization. In this work, the all-inorganic flexible dielectric film capacitors have been obtained. The flexible capacitors show a desirable recoverable energy density (Wrec) of …
Learn MoreFig. 2 provides the microstructures and root mean square roughness used to characterize the quality of the BNMT-x thin films. The root mean square cross-section roughness is 2.96, 1.97, 1.44, and 0.52 nm for x = 1.00, 1.08, 1.16, and 1.24, respectively.The average grain size of the film decreases, indicating the suppression of …
Learn MoreThin film capacitors of ~1,000 nm thickness have recently been studied in terms of film behavior for specific device application such as piezoelectric thin films for …
Learn MoreAdvances have been made in the electronic characterization and analysis of thin-film ferroelectric (FE) memory capacitors using capacitance vs. voltage (C-V) measurements.
Learn MoreThe field of ES capacitors based on (pseudo)binary HfO 2 and ZrO 2 thin films is growing quite rapidly. Recently, Ali et al. reviewed the polarization behavior and ES properties of …
Learn MoreThe ferroelectric properties of Pt/PZT/Pt/TiO2/SiO2/Si thin film capacitors with different thicknesses are investigated. The degradation of the switching properties is fully reproduced by ...
Learn MoreThis article presents a wide-angle-scanning leaky-wave antenna (LWA) based on a composite right/left-handed (CRLH) transmission line. In contrast to traditional semiconductor elements, thin-film ferroelectric capacitors were implemented in the CRLH unit cells to enable electric beam scanning. The proposed CRLH LWA has a single-layer …
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